Characterisation of SiC by IBIC and other IBA
techniques
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Presented at European Conference on
Accelerators in Applied Research and Technology 21st - 25th August 2001 in
Guildford, UK, and to be published in Nuclear Instruments and Methods in
Physics Research B, Volume 188, Issues 1-4, Pages 130-134 (April 2002) |
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M. Jaksic1, Z. Bosnjak1, D. Gracin1, Z. Medunic1, Z. Pastuovic1, E. Vittone2, F. Nava3 |
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1 Department of experimental physics, Ruđer Boković Institute, P.O.Box 180, 10002 Zagreb, Croatia 2 Dipartimento di Fisica Sperimentale and INFM, Universitą di Torino, Torino, Italy 3 Dipartimento di Fisica, Universitą di Modena, Italy |
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Keywords: silicon carbide, ion beam induced
charge, ion beam analysis |
Abstract
Several new technological
applications of silicon carbide attracted significant attention in recent
years. As a wide gap semiconductor it has also capability to be used as a room
temperature radiation detector. For most applications, material properties like
homogeneity of charge transport, presence of defects, resistance to radiation
damage, influence of light impurities (hydrogen), are of prime importance. Two
different kinds of samples, crystalline (4H-SiC) and thin amorphous
(a-Si1-xCx:H) films, were studied by ion beam techniques. In the case of SiC
single crystal radiation detectors, Li and proton beams with a wide range of
energies were used to probe the charge collection efficiency at different
device depths using the IBIC technique. Thin amorphous and microcrystalline
Si1-xCx:H films with a different stoichiometry and different degree of
structural ordering were examined using RBS and ERDA.