Paper 2002-06
Lateral micro-ion beam
induced charge characterization of chemical vapor deposition diamond
Materials Science and Engineering: B Volume:
90, Issue: 1-2, March 7, 2002, pp. 191 - 195 |
Lu Rongronga; C. Manfredottib; F. Fizzottib; E. Vittoneb; A. Logiudiceb |
a Shanghai Institute of Nuclear Research, P.O. Box 800- 204, Shanghai
201800, People ’s Republic of China b Department of Physics, Turin University, Via. P. Giuria 1- 10125
Turin, Italy |
Keywords: CVD; Diamond; Charge collection
efficiency; Lateral micro-ion beam induced charge |
Abstract
A
lateral micro-ion beam induced charge technique has been used to obtain the
charge collection efficiency (CCE) profiles at different biases applied on the
growth electrode of chemical vapor deposition (CVD) diamond. A new linear
model, only related to characteristic parameters (mobility×lifetime product) of
CVD diamond, was reasonably proposed and checked by fitting the CCE profile.
The results confirm that: (1) this CVD diamond is similar to a n–p junction
film with bulk volume p type on the substrate side at the positive bias applied
on the growth side; (2) in the case of negative bias, space charge on both
sides may arise from donors/acceptors of the film and electrons/holes injected
from the growth/substrate side, but in the middle no space charge exists due to
the electron–hole neutralization.