Collection efficiency map of a GaAs sample (frontal IBIC). The circular region corresponds to the upper electrode irradiated by 2.4 MeV protons. The bias voltage is 200 V. It is evident a drop of silver paste and the shadow of the gold wire used for bonding. The colour scale (reported in the image) represents the value of the charge collection efficiency.
- F.Nava, P. Vanni, C. Canali, C. Manfredotti, P. Polesello, E. Vittone, G. Egeni, V. Rudello, "Analysis of Uniformity of as Prepared and Irradiated S.I. GaAs Radiation Detectors" , Presented at IEEE - Nuclear Science Symposium 1997 - Albuquerque (USA), 9-15 November 1997, to be published on IEEE - NSS97 Conference Records
- E.Vittone, C. Manfredotti, F. Fizzotti, K.Mirri, E.Gargioni, P. Polesello, A. Lo Giudice, S.Galassini, F.Nava, P.Vanni, P.Rossi, "IBIC analysis of gallium arsenide Schottky diodes" , Submitted at 6th Int. Conf. on Nuclear Microprobe Technology and Applications, Spier Estate, South Africa, 11-16 October 1998, and to be published on NIM B