Collection efficiency profile of a Si diode (lateral IBIC) obtained at different bias voltage. The diffusion lenght Lp is evaluated from the slope of the exponential tail (see our publication list) .
C.Manfredotti, E.Vittone, P.Polesello, F.Fizzotti, M. Jaksic, I. Bodganovic, V. Valkovic, "Scanning Ion beam microscopy - a new tool for mapping transport properties of semiconductor nuclear detectors" , CP392, Application of Accelerators in Research and Industry, J.L. Duggan and I.L. Morgan eds., AIP Press, New York, 1997, pp. 705-708
C. Manfredotti, F. Fizzotti, E.Gargioni, R. Lu, P. Polesello, A. Lo Giudice, E. Vittone, S.Galassini, M.Jaksic, "Evaluation of the diffusion length in silicon diodes by means of the lateral IBIC technique" , Submitted at 6th Int. Conf. on Nuclear Microprobe Technology and Applications, Spier Estate, South Africa, 11-16 October 1998, and to be published on NIM B.