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Paper 2000-02
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Theory of Ion beam Induced Charge Collection based on the extended Shockley-Ramo Theorem
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Presented at 14th International Conference on Ion Beam Analysis (IBA-14) and ECAART-6, Dresden, Germany, July 26-30 1999, and published in Nucl. Instr. And Meth. In Phys. Res. B, 161-163 (1-4) (2000) pp. 446-451 |
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E.Vittone, F.Fizzotti, A.LoGiudice, C.Paolini, C.Manfredotti |
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a Experimental Physics Dept., Torino University, INFN-Sez. Torino, INFM-Unità di Torino, via P.Giuria 1, 10125 Torino, Italy. |
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Keywords: Semiconductors, Electronic properties, Ion Beam Induced Charge |
ABSTRACT
An analysis of the charge collection process induced by focused MeV ion beams in semiconductor devices is presented. It is based on the extended Shockley - Ramo theorem that provides a rigorous mathematical tool for the calculation of the induced charge and current under the assumption of a quasi-steady-state operation of the semiconductor device.
A complete description of the theory and underlying assumption is given as well as a simple application of the method aimed to evaluate the main transport properties of fully depleted semiconductors from the analysis of frontal and lateral IBICC measurements.
