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Ionoluminescence in CVD diamond and in cubic boron nitride

Presented at 11th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, 38/9/2000, Porto (PO), and published in Diamond and Related Materials 10 (2001) 568-573

C. Manfredottia, E. Vittonea a, A. Lo Giudice a, C. Paolini a, F. Fizzotti a, G. Dinca b, V. Ralchenko c, and S. V. Nistor d

aExperimental Physics Department, University of Torino, Italy and Torino- University Unity of Research of INFM

bDacia Syntetic Diamond Co., Bucharest, Romania

cGeneral Physics Institute, Russian Academy of Sciences, Moscow, Russia

d National Institute for Materials Physics, Magurele-Bucharest, Romania

Keywords: CVD diamond ; c-BN ; ionoluminescence ; radiation damage ;



Ion By the new IBIL ( Ion Beam Induced Luminescence ) apparatus in National Legnaro Laboratories, Italy, a series of measurements concerning both wide area luminescence spectra and monochromatic luminescence maps with few micrometers space resolution have been carried out on several CVD diamond and c-BN samples. Protons of 2MeV with a penetration depth of about 25 micrometers have been used in order to investigate the materials in the bulk. These measurements have been correlated with PIXE ( Particle Induced X-Ray Emission ) and EPR data. The measurements have been performed at increasing proton doses in order also to investigate the radiation hardness of luminescence peaks. The results indicate that ionoluminescence of CVD diamond is dominated by three bands around 2, 2.4 and 2.9 eV, the intermediate one being very radiation hard and the other two radiation weak. The band at 2 eV is correlated with N content and it is particularly high in samples with poor electronic properties. IBIL in c-BN is also dominated by three bands, one around 2 eV and the other two at higher energies with respect to CVD diamond. All these three bands seem to be relatively radiation hard with respect to CVD diamond and to be related with defects induced by doping.